Semiconductor device and fabrication method for the same

ABSTRACT

The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.12/492,605, filed on Jun. 26, 2009, which is now U.S. Pat. No.7,994,036, which claims priority under 35 U.S.C. §119 on PatentApplication No. 2008-283607 filed in Japan on Nov. 4, 2008 and PatentApplication No. 2008-172572 filed in Japan on Jul. 1, 2008, the entirecontents of each of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and afabrication method for the same, and more particularly, to asemiconductor device having two types of especially miniaturizedtransistors and a fabrication method for the same.

In recent years, there have been requests for semiconductor devices withlower power and higher-speed operation. For speedup of semiconductordevices, known is a method in which the gate capacitance of a metalinsulator semiconductor field effect transistor (MISFET) is increased toincrease the drive current.

To increase the gate capacitance, a gate insulating film must be thinnedto shorten the inter-electrode distance (distance between a substrateand a gate electrode). At present, the physical thickness of the gateinsulating film of a MISFET has been reduced to as small as about 2 nmwhen silicon oxide nitride (SiON) is used.

With the thinning of the gate insulating film, increase in gate leak hasincreasingly become a problem to be addressed. To reduce the gate leak,use of a material high in dielectric constant such as hafnium (Hf)oxide, in place of a conventionally used silicon oxide (SiO₂) seriesmaterial, as the gate insulating film has been examined.

The thinning of the gate insulating film also causes a problem that withthe hitherto used gate electrode made of polysilicon, the gatecapacitance decreases due to depletion of the gate electrode. Thedecrease of the gate capacitance is equivalent to increase by about 0.5nm of the thickness of the gate oxide film made of SiO₂, for example.The thinning of the gate insulating film inevitably involves increase ingate leak. However, if only the depletion can be suppressed, theeffective thickness of the gate insulating film can be reduced with noincrease in gate leak. In the case of SiO₂, when the thickness isreduced by 0.1 nm, the leak current will be ten or more times as largeas that before the thinning. In this case, therefore, the effect ofsuppressing the depletion of the gate electrode will be great.

To avoid depletion of the gate electrode, examination has been made onreplacing the material of the gate electrode from polysilicon to a metalfree from causing depletion. However, while it is possible to formelectrodes for p-MISFETs and electrodes for n-MISFETs differentiallywith polysilicon by forming an impurity level with implantation of animpurity, such differential formation is not available with metal.

In the present semiconductor devices, reduction in threshold voltage(Vt) is indispensable to respond to the request for higher-speedoperation. For lower Vt, electrodes for p-MISFETs and electrodes forn-MISFETs must have work function (WF) values close to the band edges ofsilicon. While a high WF close to the WF value (about 5.2 eV) at the top(top edge) of the valence band of silicon is required for electrodes forp-MISFETs, a low WF close to the WF value (about 4.1 eV) at the bottom(bottom edge) of the conduction band of silicon is required forelectrodes for n-MISFETs.

Since there is no ideal metal material responding to the above request,examination has been made on use of a metal having a WF valuecorresponding to roughly the center between the WF value of the p-sideregion and the WF value of the n-side region. With this, a p-MISFET andan n-MISFET can be made to have the same Vt value. However, as therequest for lower Vt progresses, such a semiconductor device is becomingno more practical.

At present, searches have been vigorously made for metal materialsusable as electrodes for p-MISFETs and n-MISFETs, and recently somepromising candidates have been found. Promising candidates for n-MISFETelectrodes include Ta series electrodes such as TaC and TaN incombination with a gate insulating film (including the case of a cap ofa gate insulating film) including a lanthanoid series material such asLa. Promising candidates for p-MISFET electrodes include precious metalssuch as Pt and Ir, MoO, and the like.

In actual application of the above metal materials to transistors, useof a metal inserted poly-Si (MIPS) structure has been examined from thestandpoints of consistency with the conventional processes andmicrofabrication. The MIPS structure is a multilayer structure of ametal material having a thickness of about 10 nm or less and polysiliconhaving a thickness of about 100 nm or less deposited on the metalmaterial.

A complicate process must be passed for fabricating a semiconductordevice like a complementary metal insulator semiconductor (CMIS) havinga p-MISFET and an n-MISFET whose gate electrodes are different inmaterial or composition formed on the same semiconductor substrate. Forexample, a metal for the n-MISFET is deposited on a gate insulatingfilm, the portion of the metal for the n-MISFET formed in the p-MISFETregion is selectively removed, and a metal for the p-MISFET is depositedon the portion of the gate insulating film in the p-MISFET region (seeF. Ootsuka, et al., “extended abstract of the 2006 internationalconference on solid state device and materials, Yokohama,” 2006, pp.1116-1117 (Non-Patent Document 1), for example).

The above process not only increases the number of process steps, butalso causes a non-negligible increase in misalignment because two timesof lithography are necessary for removal of the portion of the p-MISFETmetal deposited in the n-MISFET region and for removal of the portion ofthe n-MISFET metal deposited in the p-MISFET region.

If the metal for the p-MISFET and the metal for the n-MISFET overlapeach other at the boundary between the p-MISFET region and the n-MISFETregion, a metal remainder will be formed at gate etching. For thisreason, it is not allowed to form the metal for the p-MISFET and themetal for the n-MISFET continuously. At present, the required minimumwidth of the element isolation region (STI) is 100 nm or less. If theminimum width of the element isolation region becomes smaller, it willbe substantially difficult to secure an alignment margin with which themetal for the p-MISFET and the metal for the n-MISFET will never be incontact with each other and the interface of the metals will never beshifted to enter an element formation region from the element isolationregion. Also, etching of the element isolation region that may occurduring each etching process step will cause a serious problem.

For simplifying the process, an attempt has been made to form the gateelectrode of a p-MISFET and the gate electrode of an n-MISFET of a samemetal material. In this method, in either the p-MISFET or the n-MISFET,a cap film having a thickness of about 1 nm may be inserted between thegate insulating film and the gate electrode, to obtain optimum effectivework functions (eWF) required for the p-MISFET and the n-MISFET.Examination has also been made to use different cap films for thep-MISFET and the n-MISFET (see N. Mise et al., IEDM 2007, pp. 527-530(Non-Patent Document 2), for example). In this structure, in which thegate electrode of the p-MISFET and the gate electrode of the n-MISFETare made of a same material, working such as gate etching is greatlysimplified.

SUMMARY OF THE INVENTION

However, the conventional semiconductor device having a cap film has aproblem as follows. It is very difficult to form a cap film in only oneof the p-MISFET and the n-MISFET or form different cap films in thep-MISFET and the n-MISFET.

For example, in the case of forming a cap film in only the n-MISFET,after formation of a cap film having a thickness of about 1 nm over theentire surface, the portion of the cap film in the p-MISFET region mustbe removed. Selective removal of a thin cap film with high precision isvery difficult. Since the influence of the thickness of the cap film oneWF is very large, eWF will greatly vary if the cap film is made thinneror remains unremoved. Resultantly, the threshold voltage will greatlychange. Also, there is a problem that the cap film and the gateinsulating film may be damaged in the above process steps.

In the case of adopting a process in which after formation of a gatestack for the p-MISFET, for example, a gate stack for the n-MISFET isformed starting from the gate insulating film (see Non-Patent Document2, for example), roughly the same number of steps as in the case ofusing different materials for the gate electrode of the p-MISFET and thegate electrode of the n-MISFET will be necessary (see Non-PatentDocument 1, for example).

To solve the above problem, an object of the present disclosure is toimplement a semiconductor device in which the effect of a cap film isgiven to only a transistor of one conductivity type without increasingthe number of process steps.

To attain the above object, an example semiconductor device includes afirst transistor having a gate insulating film with a cap materialdiffused therein and a second transistor having a gate insulating filmlittle containing the cap material.

Specifically, the example semiconductor device includes a firsttransistor and a second transistor formed in a semiconductor substrate.The first transistor includes: a first gate insulating film formed onthe semiconductor substrate; and a first gate electrode formed on thefirst gate insulating film. The second transistor includes: a secondgate insulating film formed on the semiconductor substrate; and a secondgate electrode formed on the second gate insulating film. The first gateinsulating film includes a first insulating material with a firstelement diffused therein, the second gate insulating film includes thefirst insulating material, and the amount of the first element containedin the first gate insulating film is greater than the amount of thefirst element contained in the second gate insulating film.

In the example semiconductor device, the first gate insulating filmincludes the first insulating material with the first element diffusedtherein, and the amount of the first element contained in the first gateinsulating film is greater than the amount of the first elementcontained in the second gate insulating film. Hence, when the firstelement has the effect of reducing eWF, for example, the eWF of thefirst transistor decreases, but the eWF of the second transistor doesnot vary. In reverse, when the first element has the effect ofincreasing eWF, the eWF of the first transistor increases, but the eWFof the second transistor does not vary. Also, since the first gateinsulating film and the second gate insulating film are the same inbasic configuration except for the amount of the first element, they canbe formed without the necessity of selective etching of a thin cap film.

The first fabrication method for a semiconductor device of the presentdisclosure includes the steps of: (a) forming an insulating film and afirst electrode film sequentially in this order on the entire surface ofa semiconductor substrate having a first region and a second region; (b)removing a portion of the first electrode film formed on the firstregion; (c) forming a first cap film containing a first element over thesemiconductor substrate and thereafter subjecting the resultantsubstrate to heat treatment after the step (b), to allow the firstelement to diffuse into a portion of the insulating film formed on thefirst region and at least a top portion of the first electrode film; (d)removing the first cap film after the step (c); (e) forming a secondelectrode film over the semiconductor substrate after the step (d); and(f) etching at least the second electrode film and the insulating film,to form a first gate insulating film including the insulating film withthe first element diffused therein and a first gate electrode includingthe second electrode film on the first region, and form a second gateinsulating film including the insulating film and a second gateelectrode including the second electrode film on the second region.

In the first fabrication method for a semiconductor device, the firstcap film is formed with the first electrode film remaining only on thesecond region, to allow the first element to diffuse under heating.Hence, while the first element diffuses into the portion of theinsulating film, which is to be the gate insulating film, formed on thefirst region, the first element little diffuses into the portion thereofformed on the second region. In this way, the first element that changesthe value of eWF can be introduced into only the first gate insulatingfilm of the first transistor without the necessity of selective workingof the first cap film.

The second fabrication method for a semiconductor device of the presentdisclosure includes the steps of: (a) forming an insulating film, afirst electrode film, and a hard mask sequentially in this order on theentire surface of a semiconductor substrate having a first region and asecond region; (b) removing a portion of the hard mask formed on thefirst region; (c) forming a first cap film containing a first elementover the semiconductor substrate and thereafter subjecting the resultantsubstrate to heat treatment after the step (b), to allow the firstelement to diffuse into a portion of the insulating film formed on thefirst region and at least a top portion of the hard mask; (d) removingthe first cap film and the hard mask after the step (c); (e) forming asecond electrode film over the semiconductor substrate after the step(d); and (f) etching at least the second electrode film, the firstelectrode film, and the insulating film, to form a first gate insulatingfilm including the insulating film with the first element diffusedtherein and a first gate electrode including the second electrode filmon the first region, and form a second gate insulating film includingthe insulating film and a second gate electrode including the secondelectrode film and the first electrode film on the second region.

In the second fabrication method for a semiconductor device, the firstcap film is formed with the hard mask remaining only on the secondregion, to allow the first element to diffuse under heating. Hence,while the first element diffuses into the portion of the insulatingfilm, which is to be the gate insulating film, formed on the firstregion, the first element little diffuses into the portion thereofformed on the second region. In this way, the first element that changesthe value of eWF can be introduced into only the first gate insulatingfilm of the first transistor without the necessity of selective workingof the first cap film. Also, since there is no possibility of diffusionof the first element into the first electrode film, removal of the firstelectrode film is unnecessary. Hence, the electrode film of the secondgate electrode can be made thicker than that of the first gateelectrode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device of Embodiment1.

FIGS. 2A through 2D are cross-sectional views illustrating, in order ofsteps, a fabrication method for the semiconductor device of Embodiment1.

FIGS. 3A through 3D are cross-sectional views illustrating, in order ofsteps, the fabrication method for the semiconductor device of Embodiment1.

FIG. 4 is a cross-sectional view of an alteration of the semiconductordevice of Embodiment 1.

FIG. 5 is a cross-sectional view of a semiconductor device of Embodiment2.

FIGS. 6A through 6D are cross-sectional views illustrating, in order ofsteps, a fabrication method for the semiconductor device of Embodiment2.

FIG. 7 is a cross-sectional view of a semiconductor device of Embodiment3.

FIGS. 8A through 8D are cross-sectional views illustrating, in order ofsteps, a fabrication method for the semiconductor device of Embodiment3.

FIGS. 9A through 9D are cross-sectional views illustrating, in order ofsteps, the fabrication method for the semiconductor device of Embodiment3.

FIGS. 10A through 10D are cross-sectional views illustrating, in orderof steps, an alteration of the fabrication method for the semiconductordevice of Embodiment 3.

FIGS. 11A through 11D are cross-sectional views illustrating, in orderof steps, the alteration of the fabrication method for the semiconductordevice of Embodiment 3.

FIG. 12 is a cross-sectional view of a semiconductor device ofEmbodiment 4.

FIGS. 13A through 13D are cross-sectional views illustrating, in orderof steps, a fabrication method for the semiconductor device ofEmbodiment 4.

FIGS. 14A through 14D are cross-sectional views illustrating, in orderof steps, the fabrication method for the semiconductor device ofEmbodiment 4.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

Embodiment 1 of the present invention will be described with referenceto the accompanying drawings. FIG. 1 shows a cross-sectionalconfiguration of a semiconductor device of Embodiment 1. As shown inFIG. 1, the semiconductor device of this embodiment includes a firsttransistor 15 and a second transistor 16 both formed on a semiconductorsubstrate 11 such as a silicon substrate, for example. In thisembodiment, description will be made assuming that the first transistor15 is an n-MISFET and the second transistor 16 is a p-MISFET.

The first transistor 15 is formed in a p-type active region 14 of thesemiconductor substrate 11, and the second transistor 16 is formed in ann-type active region 13 thereof. The p-type active region 14 and then-type active region 13 are isolated from each other with an elementisolation region 12.

The first transistor 15 includes a first gate insulating film formed onan underlying film 21 made of silicon oxide (SiO₂). The first gateinsulating film is a cap material-diffused film 22A made of anitrogen-added hafnium silicate film (HfSiON) with lanthanum oxide (LaO)diffused therein. A first gate electrode 27 is formed on the first gateinsulating film. The first gate electrode 27 is a multilayer filmincluding a second electrode film 25 made of titanium nitride (TiN) anda third electrode film 26 made of polysilicon. First sidewalls 35 areformed on the side faces of the first gate electrode 27. First extensionregions 31 are formed on the sides of the first gate electrode 27 in thesemiconductor substrate 11, and first source/drain regions 32 are formedon the outer sides of the first extension regions 31.

The second transistor 16 includes a second gate insulating film formedon the underlying film 21 made of SiO₂. The second gate insulating filmis an insulating film 22 made of HfSiON. A second gate electrode 28 isformed on the second gate insulating film. The second gate electrode 28is a multilayer film including a first electrode film 24 made of TiN,the second electrode film 25, and the third electrode film 26. Secondsidewalls 36 are formed on the side faces of the second gate electrode28. Second extension regions 33 are formed on the sides of the secondgate electrode 28 in the semiconductor substrate 11, and secondsource/drain regions 34 are formed on the outer sides of the secondextension regions 33.

In the semiconductor device of this embodiment, both the first andsecond gate insulating films include HfSiOH as the first insulatingmaterial. While the first gate insulating film has La as the firstelement diffused in HfSiON, the second gate insulating film is basicallymade of HfSiON containing no La. Also, while the first gate electrode 27has the second electrode film 25 as the TiN film, the second gateelectrode 28 has the multilayer film of the first electrode film 24 andthe second electrode film 25 as the TiN film. In other words, the secondgate electrode 28 has a TiN film thicker than the first gate electrode27.

As will be described later, the eWF of a gate electrode made of a TiNfilm decreases under the influence of an La-diffused HfSiON film. Also,the value of eWF is greater as the TiN film is thicker. Accordingly, thesemiconductor device of this embodiment includes the n-MISFET small ineWF and the p-MISFET large in eWF. Also, the first gate insulating filmand the second gate insulating film are the same in configuration exceptthat La is diffused in the first gate insulating film, and hence can beformed without the necessity of selective etching of a thin cap film.

Hereinafter, a fabrication method for the semiconductor device ofEmbodiment 1 will be described with reference to the relevant drawings.First, as shown in FIG. 2A, the n-type active region 13 and the p-typeactive region 14 isolated from each other with the element isolationregion 12 are formed in the semiconductor substrate 11 made of silicon.Subsequently, the underlying film 21 made of SiO₂ having a thickness of1 nm, the insulating film 22 made of HfSiON having a thickness of 2.5nm, and the first electrode film 24 made of TiN having a thickness of 5nm are sequentially formed on the semiconductor substrate 11.

The underlying film 21 may be formed by rapid thermal oxidation (RTO)using oxygen gas. In place of RTO, heat treatment using a heat oven maybe adopted, and a gas species other than the oxygen gas may be used.Also, in place of the thermal oxide film, a chemical oxide film and thelike, or even a silicon oxide nitride (SiON) film, may be used.

The insulating film 22 may be formed by depositing a hafnium silicate(HfSiO) film by metal organic chemical vapor deposition (MOCVD), atomiclayer deposition (ALD), or the like and then subjecting the HfSiO filmto plasma nitriding to form an HfSiON film. In place of the HfSiON film,any other high dielectric constant film such as an aluminum oxide(Al₂O₃) film, a zirconium oxide (ZrO₂) film, a hafnium oxide (HfO₂)film, a scandium oxide (ScO) film, or the like may be used. Otherwise,depending on the material of a first cap film to be described later, alanthanoid series insulating film such as an LaO film, a dysprosiumoxide (DyO) film, or the like may be used. When LaO, DyO, or the like isused as the insulating film, a material, such as MgO, ScO, or the like,that has an eWF reducing effect and diffuses in the insulating film, andyet a redundancy of which failing to diffuse can be removed selectivelymay be selected as the first cap film.

Otherwise, an SiO₂ film, an SiON film, or the like, which is not a highdielectric, may be used depending on the use. Also, in place of MOCVD,chemical vapor deposition (CVD), physical vapor deposition (PVD), andthe like may be adopted.

As shown in FIG. 2B, a resist film 41 is formed covering the n-typeactive region 13. Thereafter, using the resist film 41 as the mask, theportion of the first electrode film 24 formed on the p-type activeregion 14 is removed.

As shown in FIG. 2C, after removal of the resist film 41 by cleaningwith a thinner, a first cap film 42 made of LaO having a thickness of 1nm is formed on the resultant semiconductor substrate 11.

As shown in FIG. 2D, heat treatment is performed at 800° C. for 10minutes, whereby LaO thermally diffuses, changing the portion of theinsulating film 22 formed on the p-type active region 14 to a capmaterial-diffused film 22A containing LaO. Also, a cap material-diffusedregion 24A in which LaO diffuses is formed in the top portion of thefirst electrode film 24. In the case where the first electrode film 24is made of TiN and the first cap film 42 is made LaO, the capmaterial-diffused region 24A is a TiN film in which LaO thermallydiffuses (a titanium lanthanum nitride film).

The first cap film 42, which may just be an insulating film having theeffect of reducing the eWF of an electrode, may be made of an oxide of alanthanoid series element such as DyO, in place of LaO, or made of ScO,magnesium oxide (MgO), or the like. The thickness of the first cap film42 may be changed depending on the value of eWF required. Specifically,the first cap film 42 may be made thick for further reducing eWF, andmay be made thin for setting eWF at a higher value. The temperature andtime of the heat treatment may be changed appropriately depending on thethickness of the insulating film 22 and the value of eWF required.

Subsequently, as shown in FIG. 3A, the redundant first cap film 42 isremoved. This removal may be made with an appropriate cleaner dependingon the material, thickness, and the like of the first cap film 42. Whenan LaO film was used as the first cap film 42, 10-second cleaning may bemade with a dilute hydrochloric acid (dHCl) obtained by dilutinghydrochloric acid (concentration: 37 mass %) 1000 times. The dilutionratio and the cleaning time may be changed appropriately depending onthe thickness of the LaO film, the heat treatment time, and the like.The first cap film 42 may not remain on the first insulating film 22 andthe first electrode film 24 as diffusion of the first cap layer 42progresses depending on a condition. In this case, it is unnecessary toremove the first cap film 42.

As shown in FIG. 3B, after removal of the cap material-diffused region24A of the first electrode film 24, the second electrode film 25 made ofTiN and the third electrode film 26 made of polysilicon are sequentiallydeposited. Subsequently, an impurity is implanted in the third electrodefilm 26. This impurity implantation is unnecessary if the thirdelectrode film 26 is deposited as an impurity-doped polysilicon film.

If the cap material diffuses to as far as the second gate insulatingfilm, the eWF of the second transistor will decrease. To prevent this,the cap material-diffused region 24A was removed. Hence, when the firstelectrode film 24 is sufficiently thick, or the cap material is amaterial less easy to diffuse, removal of the cap material-diffusedregion 24A is unnecessary.

It has been experimentally clarified that, when the first electrode film24 is a TiN film and the first cap film 42 is an LaO film, La diffusesover a thickness of about 3 nm with heat treatment at 800° C. for 10minutes. Accordingly, removal of the cap material-diffused region 24A isunnecessary when the thickness of the first electrode film 24 is 8 nm ormore.

Any method may be adopted to remove the cap material-diffused region 24Aas long as it can remove the cap material-diffused region 24A withoutdegrading the insulating film 22. When the first electrode film 24 is aTiN film and the first cap film 42 is an LaO film, dilute hydrogenperoxide (H₂O₂) may be used for removal. Otherwise, sulfuric acidhydrogen peroxide mixture (SPM), ammonia hydrogen peroxide mixture(APM), or the like may be used.

Furthermore, the removal of the cap material-diffused region 24A and theremoval of the first cap film 42 may be performed in a single stepprocess. For example, in the case where the first electrode film 24 is aTiN film and the first cap film 42 is a LaO film, the use of dilutedhydrochloric acid or hydrochloric acid-aqueous hydrogen peroxide enablescontinuous removal of the first cap film 42 and the capmaterial-diffused region 24A without necessitating change in reagentsolution.

As shown in FIG. 3C, the third electrode film 26, the second electrodefilm 25, the cap material-diffused film 22A, and the underlying film 21formed on the p-type active region 14 are selectively removed bylithography and reactive ion etching (ME). Simultaneously, the thirdelectrode film 26, the second electrode film 25, the first electrodefilm 24, the insulating film 22, and the underlying film 21 formed onthe n-type active region 13 are selectively removed. With this selectiveremoval, the first gate insulating film having the cap material-diffusedfilm 22A and the first gate electrode 27 having the second electrodefilm 25 made of TiN and the third electrode film 26 made of polysiliconare formed on the p-type active region 14. Likewise, the second gateinsulating film having the insulating film 22 and the second gateelectrode 28 having the first electrode film 24 made of TiN, the secondelectrode film 25 made of TiN, and the third electrode film 26 made ofpolysilicon are formed on the n-type active region 13.

As shown in FIG. 3D, the first extension regions 31, the secondextension regions 33, the first sidewalls 35, the second sidewalls 36,the first source/drain regions 32, the second source/drain regions 34,and the like are formed. An impurity implanted in the first source/drainregions 32 and the second source/drain regions 34 is then activated. Inthis way, the first transistor 15 as the n-MISFET is formed in thep-type active region 14, while the second transistor 16 as the p-MISFETis formed in the n-type active region 13.

Next, the principle based on which the work function of the first gateelectrode 27 can be reduced without reducing the work function of thesecond gate electrode 28 in the semiconductor device of this embodimentwill be described. Table 1 shows the values of the effective workfunction (eWF) of a gate electrode, the equivalent oxide thickness (EOT)of a gate insulating film, and the gate leak current density (Jg)observed when the configuration of the gate insulating film is changed.Note that as the gate electrode, a TiN film was used.

TABLE 1 eWF EOT Jg@Vg = −1 V (eV) (nm) (A/cm²) Without LaO film 4.671.34 4.0 × 10⁻³ With LaO film 4.23 1.35 8.0 × 10⁻⁵ LaO film removed 4.571.45 2.5 × 10⁻³ LaO film removed 4.25 1.32 1.5 × 10⁻⁴ after annealing

As shown in Table 1, the eWF of the gate electrode was 4.67 eV when thegate insulating film included only HfSiON. However, when the gateinsulating film was a multilayer film of an HfSiON film and an LaO filmhaving a thickness of 1 nm, the value of eWF decreased to 4.23 eV. Thisis because of the effect of LaO of reducing eWF. When an LaO film wasonce formed and then removed with dHCl and a gate electrode was formedon the resultant gate insulating film, the eWF little decreased.However, when an LaO film was formed and then subjected to heattreatment at 800° C. for 10 minutes before being removed, the value ofeWF decreased to about the same level as observed when the LaO filmexisted. In this case, also, Jg greatly decreased compared with the caseof having no LaO film. This is considered because La diffused into thegate insulating film under the heat treatment.

In the fabrication method for the semiconductor device of thisembodiment, first, heat treatment is performed in the state where theHfSiON film and the LaO film are in contact with each other in the firsttransistor 15 as the n-MISFET and the first electrode film 24 existsbetween the HfSiON film and the LaO film in the second transistor 16 asthe p-MISFET, and thereafter, the LaO film is removed. Hence, it ispossible to provide an La-diffused HfSiON film that reduces eWF as thefirst gate insulating film of the n-MISFET and provide a non-Lainsulating film that does not change eWF as the second gate insulatingfilm of the p-MISFET, without the necessity of selective etching of theLaO film as the first cap film 42.

Moreover, the second gate electrode 28 of the p-MISFET, which includesthe multilayer film of the first electrode film 24 and the secondelectrode film 25, is greater in height than the first gate electrode 27of the n-MISFET. Hence, the eWF of the p-MISFET can be furtherincreased.

In this embodiment, both the first and second gate electrodes 27 and 28are given as a multilayer film of the TiN film and the polysilicon film.In this case, at least part of the polysilicon film may be silicided.With this, the resistance of the first and second gate electrodes 27 and28 can be reduced. Also, as the third electrode film 26, a metal filmother than the polysilicon film may be used, or otherwise the thirdelectrode film 26 may be omitted.

The first electrode film 24 is not limited to the TiN film, but ispreferably a metal film including Ti or Ta: it may be a TaN film, a TaCfilm, a TaCN film, or the like. Otherwise, any other metal material maybe used as long as an appropriate eWF value is obtained in combinationwith the cap material.

The thickness of the first electrode film 24 may be changedappropriately depending on the material and the fabrication process.Note however that when both the first electrode film 24 and the secondelectrode film 25 are a TiN film, the total thickness of the first andsecond electrode films 24 and 25 should preferably be 15 nm or more tosecure an appropriate eWF value in the p-MISFET.

In this embodiment, after the diffusion of the cap material, part of thefirst electrode film 24 is kept unremoved, so that the second gateelectrode 28 has the multilayer film of the first electrode film 24 andthe second electrode film 25. Alternatively, the first electrode film 24may be completely removed after the diffusion of the cap material. Inthis case, as shown in FIG. 4, the first gate electrode 27 and thesecond gate electrode 28 have the same configuration.

Embodiment 2

Embodiment 2 of the present invention will be described with referenceto the relevant drawings. FIG. 5 shows a cross-sectional configurationof a semiconductor device of Embodiment 2. In FIG. 5, the samecomponents as those in FIG. 1 are denoted by the same referencenumerals, and description thereof is omitted in this embodiment.

The semiconductor device of Embodiment 2 is characterized in that asecond cap film 29 is formed between the cap material-diffused film 22Aand the first gate electrode 27 and between the insulating film 22 andthe second gate electrode 28.

The second cap film 29 may be an aluminum oxide (AlO) film having athickness of 1 nm. AlO has an effect of increasing the eWF of a gateelectrode. However, the eWF reducing effect of LaO is greater than theeWF increasing effect of AlO. Hence, in the first transistor 15 as then-MISFET, the eWF of the first gate electrode 27 can be kept small withthe cap material-diffused film 22A containing LaO diffused therein. Onthe contrary, in the second transistor 16 as the p-MISFET, the eWF ofthe second gate electrode 28 can be increased since the eWF increasingeffect of AlO is exerted with no LaO diffused in the insulating film 22.

As the second cap film 29, any insulating film having the effect ofincreasing the eWF of an electrode may be used. Specifically, TaO andthe like may be used in place of AlO.

The semiconductor device of Embodiment 2 may be fabricated in thefollowing manner. First, as shown in FIG. 6A, as in Embodiment 1, theunderlying film 21 and the cap material-diffused film 22A are formed onthe p-type active region 14, and the underlying film 21, the insulatingfilm 22, and the first electrode film 24 having the capmaterial-diffused region 24A in its top portion are formed on the n-typeactive region 13.

Thereafter, as shown in FIG. 6B, after removal of the first electrodefilm 24, the second cap film 29 made of AlO is formed on the entiresurface of the semiconductor substrate. Subsequently, the secondelectrode film 25 made of TiN and the third electrode film 26 made ofpolysilicon are formed.

As shown in FIG. 6C, the third electrode film 26, the second electrodefilm 25, the second cap film 29, the cap material-diffused film 22A, andthe underlying film 21 formed on the p-type active region 14 areselectively removed by lithography and ME. Simultaneously, the thirdelectrode film 26, the second electrode film 25, the second cap film 29,the insulating film 22, and the underlying film 21 formed on the n-typeactive region 13 are selectively removed. With this selective removal,the first gate insulating film having the cap material-diffused film 22Aand the second cap film 29 and the first gate electrode 27 having thesecond electrode film 25 made of TiN and the third electrode film 26made of polysilicon are formed on the p-type active region 14. Likewise,the second gate insulating film having the insulating film 22 and thesecond cap film 29 and the second gate electrode 28 having the secondelectrode film 25 made of TiN and the third electrode film 26 made ofpolysilicon are formed on the n-type active region 13.

As shown in FIG. 6D, the first extension regions 31, the secondextension regions 33, the first sidewalls 35, the second sidewalls 36,the first source/drain regions 32, the second source/drain regions 34,and the like are formed. An impurity implanted in the first source/drainregions 32 and the second source/drain regions 34 are then activated. Inthis way, the first transistor 15 as the n-MISFET is formed in thep-type active region 14, while the second transistor 16 as the p-MISFETis formed in the n-type active region 13.

Embodiment 3

Embodiment 3 of the present invention will be described with referenceto the relevant drawings. FIG. 7 shows a cross-sectional configurationof a semiconductor device of Embodiment 3. In FIG. 7, the samecomponents as those in FIG. 1 are denoted by the same referencenumerals, and description thereof is omitted in this embodiment.

The semiconductor device of Embodiment 3 is characterized in that, whilethe second cap film 29 is not formed in the first transistor 15 as then-MISFET, the second cap film 29 is formed between the insulating film22 and the second gate electrode 28 in the second transistor 16 as thep-MISFET.

With the second cap film 29 formed only in the second transistor 16 asthe p-MISFET, the eWF of the p-MISFET can be increased reliably withoutthe possibility of increasing the eWF of the first transistor 15 as then-MISFET.

The semiconductor device of Embodiment 3 may be fabricated as follows.First, as shown in FIG. 8A, the n-type active region 13 and the p-typeactive region 14 isolated from each other with the element isolationregion 12 are formed on the semiconductor substrate 11 made of silicon.Subsequently, the underlying film 21 made of SiO₂ having a thickness of1 nm, the insulating film 22 made of HfSiON having a thickness of 2.5nm, the second cap film 29 made of AlO having a thickness of 1 nm, andthe first electrode film 24 made of TiN having a thickness of 5 nm aresequentially formed on the semiconductor substrate 11.

The underlying film 21 may be formed by RTO using oxygen gas. In placeof RTO, heat treatment using a heat oven may be adopted, and a gasspecies other than the oxygen gas may be used. Also, in place of thethermal oxide film, a chemical oxide film and the like, or even an SiONfilm, may be used.

The insulating film 22 may be formed by depositing an HfSiO film byMOCVD, ALD, or the like and then subjecting the HfSiO film to plasmanitriding to form an HfSiON film. In place of the HfSiON film, any otherhigh dielectric constant film such as an aluminum oxide (Al₂O₃) film, azirconium oxide (ZrO₂) film, a hafnium oxide (HfO₂) film, a scandiumoxide (ScO) film, or the like may be used. Alternatively, depending onthe material of a cap film to be described later, a lanthanoid seriesinsulating film such as a lanthanum oxide (LaO) film, a dysprosium oxide(DyO) film, or the like can be used. Otherwise, an SiO₂ film, an SiONfilm, or the like, which is not a high dielectric, may be used dependingon the use. Also, in place of MOCVD, chemical vapor deposition (CVD),physical vapor deposition (PVD), and the like may be adopted.

As shown in FIG. 8B, a resist film 41 is formed covering the n-typeactive region 13. Thereafter, using the resist film 41 as the mask, theportions of the first electrode film 24 and the second cap film 29formed on the p-type active region 14 are removed. Note that the secondcap film 29 may not be removed if the properties of the first transistor15 including the second cap film 29 are acceptable.

As shown in FIG. 8C, after removal of the resist film 41 by cleaningwith a thinner, a first cap film 42 made of LaO having a thickness of 1nm is formed on the resultant semiconductor substrate 11.

As shown in FIG. 8D, heat treatment is performed at 800° C. for 10minutes, whereby LaO thermally diffuses, changing the portion of theinsulating film 22 formed on the p-type active region 14 to a capmaterial-diffused film 22A containing LaO. Also, a cap material-diffusedregion 24A containing LaO is formed in the top portion of the firstelectrode film 24.

The first cap film 42, which may just be an insulating film having theeffect of reducing the eWF of an electrode, may be made of an oxide of alanthanoid series element such as DyO, or made of ScO, magnesium oxide(MgO), or the like. The thickness of the first cap film 42 may bechanged depending on the value of eWF required. Specifically, the firstcap film 42 may be made thick for further reducing eWF, and may be madethin for setting eWF at a higher value. The temperature and time of theheat treatment may be changed appropriately depending on the thicknessof the insulating film 22 and the value of eWF required.

Subsequently, as shown in FIG. 9A, the redundant first cap film 42 isremoved. This removal may be made with an appropriate cleaner dependingon the material, thickness, and the like of the first cap film 42. Whenan LaO film was used as the first cap film 42, 10-second cleaning may bemade with a dilute hydrochloric acid (dHCl) obtained by dilutinghydrochloric acid (concentration: 37 mass %) 1000 times. The dilutionratio and the cleaning time may be changed appropriately depending onthe thickness of the LaO film, the heat treatment time, and the like.

As shown in FIG. 9B, after removal of the cap material-diffused region24A in the first electrode film 24, the second electrode film 25 made ofTiN and the third electrode film 26 made of polysilicon are sequentiallydeposited. Subsequently, an impurity is implanted in the third electrodefilm 26. This impurity implantation is unnecessary if the thirdelectrode film 26 is deposited as an impurity-doped polysilicon film.

If the cap material diffuses to as far as the second gate insulatingfilm, the eWF of the second transistor will decrease. To prevent this,the cap material-diffused region 24A was removed. Hence, when the firstelectrode film 24 is sufficiently thick, or the cap material is amaterial less easy to diffuse, removal of the cap material-diffusedregion 24A is unnecessary.

It has been experimentally clarified that, when the first electrode film24 is a TiN film and the first cap film 42 is an LaO film, La diffusesover a thickness of about 3 nm with heat treatment at 800° C. for 10minutes. Accordingly, removal of the cap material-diffused region 24A isunnecessary when the thickness of the first electrode film 24 is 8 nm ormore.

Any method may be adopted to remove the cap material-diffused region 24Aas long as it can remove the cap material-diffused region 24A withoutdegrading the insulating film 22. When the first electrode film 24 is aTiN film and the first cap film 42 is an LaO film, dilute hydrogenperoxide (H₂O₂) may be used for removal. Alternatively, sulfuric acidhydrogen peroxide mixture (SPM), ammonia hydrogen peroxide mixture(APM), or the like may be used.

As shown in FIG. 9C, the third electrode film 26, the second electrodefilm 25, the cap material-diffused film 22A, and the underlying film 21formed on the p-type active region 14 are selectively removed bylithography and ME. Simultaneously, the third electrode film 26, thesecond electrode film 25, the first electrode film 24, the second capfilm 29, the insulating film 22, and the underlying film 21 formed onthe n-type active region 13 are selectively removed. With this selectiveremoval, the first gate insulating film having the cap material-diffusedfilm 22A and the first gate electrode 27 having the second electrodefilm 25 made of TiN and the third electrode film 26 made of polysiliconare formed on the p-type active region 14. Likewise, the second gateinsulating film having the insulating film 22 and the second cap film 29and the second gate electrode 28 having the first electrode film 24 madeof TiN, the second electrode film 25 made of TiN, and the thirdelectrode film 26 made of polysilicon are formed on the n-type activeregion 13.

As shown in FIG. 9D, the first extension regions 31, the secondextension regions 33, the first sidewalls 35, the second sidewalls 36,the first source/drain regions 32, the second source/drain regions 34,and the like are formed. An impurity implanted in the first source/drainregions 32 and the second source/drain regions 34 is then activated. Inthis way, the first transistor 15 as the n-MISFET is formed in thep-type active region 14, while the second transistor 16 as the p-MISFETis formed in the n-type active region 13.

Alternatively, the semiconductor device of Embodiment 3 may befabricated in the following manner. First, as shown in FIG. 10A, then-type active region 13 and the p-type active region 14 isolated fromeach other with the element isolation region 12 are formed on thesemiconductor substrate 11 made of silicon. Subsequently, the underlyingfilm 21 made of SiO₂ having a thickness of 1 nm, the insulating film 22made of HfSiON having a thickness of 2.5 nm, the second cap film 29 madeof AlO having a thickness of 1 nm, the first electrode film 24 made ofTiN having a thickness of 5 nm, and a hard mask 43 are sequentiallyformed on the semiconductor substrate 11.

The hard mask 43 may be made of any material as long as the material canbe easily removed together with the first cap film to be formed laterand does not affect the electrical properties and workability of thefirst electrode film. For example, AlO and the like may be used.

As shown in FIG. 10B, a resist film 41 is formed covering the n-typeactive region 13. Thereafter, using the resist film 41 as the mask, theportions of the hard mask 43, the first electrode film 24, and thesecond cap film 29 formed on the p-type active region 14 are removed.

As shown in FIG. 10C, after removal of the resist film 41 by cleaningwith a thinner, the first cap film 42 made of LaO having a thickness of1 nm is formed on the resultant semiconductor substrate 11.

As shown in FIG. 10D, heat treatment is performed at 800° C. for 10minutes, whereby LaO thermally diffuses, changing the portion of theinsulating film 22 formed on the p-type active region 14 to the capmaterial-diffused film 22A containing LaO. Also, a cap material-diffusedregion 43A containing LaO is formed in the top portion of the hard mask43.

Subsequently, as shown in FIG. 11A, the redundant first cap film 42 isremoved. This removal may be made with an appropriate cleaner dependingon the material, thickness, and the like of the first cap film 42. Whenan LaO film was used as the first cap film 42, 10-second cleaning may bemade with a dilute hydrochloric acid (dHCl) obtained by dilutinghydrochloric acid (concentration: 37 mass %) 1000 times. The dilutionratio and the cleaning time may be changed appropriately depending onthe thickness of the LaO film, the heat treatment time, and the like.When the hard mask 43 is an AlO film, the hard mask 43 is removedsimultaneously. The hard mask 43 may be removed separately depending onthe material thereof.

As shown in FIG. 11B, the second electrode film 25 made of TiN and thethird electrode film 26 made of polysilicon are sequentially deposited.Subsequently, an impurity is implanted in the third electrode film 26.This impurity implantation is unnecessary if the third electrode film 26is deposited as an impurity-doped polysilicon film.

As shown in FIG. 11C, the third electrode film 26, the second electrodefilm 25, the cap material-diffused film 22A, and the underlying film 21formed on the p-type active region 14 are selectively removed bylithography and RIE. Simultaneously, the third electrode film 26, thesecond electrode film 25, the first electrode film 24, the second capfilm 29, the insulating film 22, and the underlying film 21 formed onthe n-type active region 13 are selectively removed. With this selectiveremoval, the first gate insulating film having the cap material-diffusedfilm 22A and the first gate electrode 27 having the second electrodefilm 25 made of TiN and the third electrode film 26 made of polysiliconare formed on the p-type active region 14. Likewise, the second gateinsulating film having the insulating film 22 and the second cap film 29and the second gate electrode 28 having the first electrode film 24 madeof TiN, the second electrode film 25 made of TiN, and the thirdelectrode film 26 made of polysilicon are formed on the n-type activeregion 13.

As shown in FIG. 11D, the first extension regions 31, the secondextension regions 33, the first sidewalls 35, the second sidewalls 36,the first source/drain regions 32, the second source/drain regions 34,and the like are formed. An impurity implanted in the first source/drainregions 32 and the second source/drain regions 34 is then activated. Inthis way, the first transistor 15 as the n-MISFET is formed in thep-type active region 14 while the second transistor 16 as the p-MISFETis formed in the n-type active region 13.

With the above configuration, since there is little possibility that thecap material may diffuse into the first electrode film 24, removal ofpart of the first electrode film 24 is unnecessary. Hence, the TiN filmportion of the second gate electrode 28 can be thickened. Note that thefabrication method using a hard mask can also be applied to the case ofnot forming the second cap film 29.

Embodiment 4

Embodiment 4 of the present invention will be described with referenceto the relevant drawings. FIG. 12 shows a cross-sectional configurationof a semiconductor device of Embodiment 4. In FIG. 12, the samecomponents as those in FIG. 7 are denoted by the same referencenumerals, and description thereof is omitted in this embodiment.

In the semiconductor device of Embodiment 4, unlike the semiconductordevice of Embodiment 3, the first gate electrode 27 of the firsttransistor 15 as the n-MISFET and the second gate electrode 28 of thesecond transistor 16 as the p-MISFET have the same configuration.Specifically, both the first gate electrode 27 and the second gateelectrode 28 are formed of a multilayer film of the second electrodefilm 25 and the third electrode film 26.

The semiconductor device of Embodiment 4 may be fabricated as follows.First, as shown in FIG. 13A, the n-type active region 13 and the p-typeactive region 14 isolated from each other with the element isolationregion 12 are formed on the semiconductor substrate 11 made of silicon.Subsequently, the underlying film 21 made of SiO₂ having a thickness of1 nm, the insulating film 22 made of HfSiON having a thickness of 2.5nm, the second cap film 29 made of AlO having a thickness of 1 nm, andthe first electrode film 24 made of TiN having a thickness of 5 nm aresequentially formed on the semiconductor substrate 11.

The underlying film 21 may be formed by RTO using oxygen gas. In placeof RTO, heat treatment using a heat oven may be adopted, and a gasspecies other than the oxygen gas may be used. Also, in place of thethermal oxide film, a chemical oxide film and the like, or even an SiONfilm, may be used.

The insulating film 22 may be formed by depositing an HfSiO film byMOCVD, ALD, or the like and then subjecting the HfSiO film to plasmanitriding to form an HfSiON film. In place of the HfSiON film, any otherhigh dielectric constant film such as an aluminum oxide (Al₂O₃) film, azirconium oxide (ZrO₂) film, a hafnium oxide (HfO₂) film, a scandiumoxide (ScO) film, or the like may be used. Alternatively, depending onthe material of a cap film to be described later, a lanthanoid seriesinsulating film such as a lanthanum oxide (LaO) film, a dysprosium oxide(DyO) film, or the like can be used. Otherwise, an SiO₂ film, an SiONfilm, or the like, which is not a high dielectric, may be used dependingon the use. Also, in place of MOCVD, chemical vapor deposition (CVD),physical vapor deposition (PVD), and the like may be adopted.

As shown in FIG. 13B, a resist film 41 is formed covering the n-typeactive region 13. Thereafter, using the resist film 41 as the mask, theportions of the first electrode film 24 and the second cap film 29formed on the p-type active region 14 are removed. Note that the secondcap film 29 may not be removed if the properties of the first transistor15 including the second cap film 29 are acceptable.

As shown in FIG. 13C, after removal of the resist film 41 by cleaningwith a thinner, a first cap film 42 made of LaO having a thickness of 1nm is formed on the resultant semiconductor substrate 11.

As shown in FIG. 13D, heat treatment is performed at 800° C. for 10minutes, whereby LaO thermally diffuses, changing the portion of theinsulating film 22 formed on the p-type active region 14 to a capmaterial-diffused film 22A containing LaO. Also, a cap material-diffusedregion 24A in which LaO diffuses is formed in the top portion of thefirst electrode film 24. In the case where the first electrode film 24is made of TiN and the first cap film 42 is LaO, the capmaterial-diffused region 24A is a TiN film in which LaO thermallydiffuses (a titanium lanthanum nitride film).

The first cap film 42, which may just be an insulating film having theeffect of reducing the eWF of an electrode, may be made of an oxide of alanthanoid series element such as DyO, or made of ScO, magnesium oxide(MgO), or the like. The thickness of the first cap film 42 may bechanged depending on the value of eWF required. Specifically, the firstcap film 42 may be made thick for further reducing eWF, and may be madethin for setting eWF at a higher value. The temperature and time of theheat treatment may be changed appropriately depending on the thicknessof the insulating film 22 and the value of eWF required.

Subsequently, as shown in FIG. 14A, the redundant first cap film 42 andcap material-diffused region 24A are removed. This removal may be madewith an appropriate cleaner depending on the materials, thicknesses, andthe like of the first cap film 42 and the cap material-diffused region24A. Where a LaO film is used as the first cap film 42 and a TiN film isused as the first electrode film 24, cleaning using a mixed solution ofdiluted hydrochloric acid and hydrogen peroxide enables removal of thefirst cap film 24 and the cap material-diffused region 24A in a singlestep process using the same reagent solution. The first cap film 24 andthe cap material-diffused region 24A may be removed in separate stepprocesses. For example, the cap material-diffused region 24A may beremoved using aqueous hydrogen peroxide, SPM, APM, or the like after thefirst cap film 42 of LaO is removed using diluted hydrochloric acid.Alternatively, where the first cap film 42 does not remain on theinsulating film 22 and the first electrode film 24 as diffusion of thefirst cap film 42 proceeds, the removal of the first cap film 24 may beomitted.

As shown in FIG. 14B, after removal of the cap material-diffused region24A and the first electrode film 24, the second electrode film 25 madeof TiN and the third electrode film 26 made of polysilicon aresequentially deposited. Subsequently, an impurity is implanted in thethird electrode film 26. This impurity implantation is unnecessary ifthe third electrode film 26 is deposited as an impurity-dopedpolysilicon film.

When the first electrode film 24 is a TiN film, the first electrode film24 can be easily removed by using aqueous hydrogen peroxide (H₂O₂),sulfuric acid hydrogen peroxide mixture (SPM), ammonia hydrogen peroxidemixture (APM), or the like. The first electrode film 24 may be removedin a single step process as the removal as the first cap film 42 and thecap material-diffused region 24A with the use of the same reagentsolution.

As shown in FIG. 14C, the third electrode film 26, the second electrodefilm 25, the cap material-diffused film 22A, and the underlying film 21formed on the p-type active region 14 are selectively removed bylithography and ME. Simultaneously, the third electrode film 26, thesecond electrode film 25, the second cap film 29, the insulating film22, and the underlying film 21 formed on the n-type active region 13 areselectively removed. With this selective removal, the first gateinsulating film having the cap material-diffused film 22A and the firstgate electrode 27 having the second electrode film 25 made of TiN andthe third electrode film 26 made of polysilicon are formed on the p-typeactive region 14. Likewise, the second gate insulating film having theinsulating film 22 and the second cap film 29 and the second gateelectrode 28 having the second electrode film 25 made of TiN and thethird electrode film 26 made of polysilicon are formed on the n-typeactive region 13.

As shown in FIG. 14D, the first extension regions 31, the secondextension regions 33, the first sidewalls 35, the second sidewalls 36,the first source/drain regions 32, the second source/drain regions 34,and the like are formed. An impurity implanted in the first source/drainregions 32 and the second source/drain regions 34 is then activated. Inthis way, the first transistor 15 as the n-MISFET is formed in thep-type active region 14, while the second transistor 16 as the p-MISFETis formed in the n-type active region 13.

When the second electrode film 25 is formed on the first electrode film24, a very thin layer containing oxygen may possibly be formed at theinterface between the first electrode film 24 and the second electrodefilm 25. This may cause a resistance at the interface, possiblyincreasing the gate resistance of the second gate electrode 28. In thisembodiment, however, in which not only the cap material-diffused region24A but also the first electrode film 24 remaining on the n-type activeregion are entirely removed after the diffusion of the first cap film42. Hence, there is no possibility of increase of the gate resistance ofthe second gate electrode 28. Also, with the removal of the firstelectrode film, the first gate electrode 27 and the second gateelectrode 28 are the same in configuration and hence can be madeidentical in thickness. This provides the effect of facilitating theelectrode film etching process.

Note that the semiconductor device of this embodiment may otherwise befabricated by diffusing the first cap film 42 according to thefabrication method using a hard mask described in Embodiment 3 and thenremoving the first electrode film 24 remaining on the n-type activeregion.

In Embodiment 4, although the first electrode 24 and the secondelectrode 25 were formed of the same material as an example, they may beformed of different materials from each other.

The fabrication methods of the above embodiments do not involve partialremoval of the insulating film 22 and the second electrode film 25.Hence, when the fabrication methods of the embodiments are applied to astatic RAM (S-RAM) and the like, the cap material-diffused film 22A andthe insulating film 22 are continuous with no gap therebetween at theboundary between the n-MISFET and the p-MISFET on the element isolationregion. Also, the second electrode film 25 is continuous.

In the above embodiments, described was the case that the firsttransistor 15 was an n-MISFET and the second transistor 16 was ap-MISFET, for example. However, if a material having the effect ofincreasing eWF is used for the first cap film 42, the first transistor15 can be a p-MISFET while the second transistor 16 an n-MISFET. In thiscase, the first cap film 42 may be made of AlO or TaO, and the firstelectrode film 24 and the second electrode film 25 may be made of ametal low in eWF such as TaN, TaC, HfO, or the like.

The present invention is applicable, not only to the case that the firsttransistor 15 and the second transistor 16 have different conductivitytypes from each other, but also to the case that they have the sameconductivity type.

In the embodiments described above, although a silicon substrate wasused as the semiconductor substrate 11, a substrate made of a materialother than silicon may be used. For example, a semiconductor oxideinsulator (SOI) substrate or a substrate made of a mixed crystalmaterial such as a gallium arsenic (GaAs) substrate or an indiumphosphorus (InP) substrate may be used.

As described above, the present disclosure can implement a semiconductordevice in which the cap film effect is given to only a transistor of oneconductivity type without the necessity of increasing the number ofprocess steps, and hence is useful for a semiconductor device having twotypes of especially miniaturized transistors and a fabrication methodfor the same.

The description of the embodiments of the present invention is givenabove for the understanding of the present invention. It will beunderstood that the invention is not limited to the particularembodiments described herein, but is capable of various modification,rearrangements and substitutions as will now become apparent to thoseskilled in the art without departing from the scope of the invention.Therefore, it is intended that the following claims cover all suchmodifications and changes as fall within the true spirit and scope ofthe invention.

1. A semiconductor device comprising a first transistor and a secondtransistor formed in a semiconductor substrate, the first transistorcomprising: a first gate insulating film formed on the semiconductorsubstrate; and a first gate electrode formed on the first gateinsulating film, the second transistor comprising: a second gateinsulating film formed on the semiconductor substrate; a cap film formedon the second gate insulating film; and the first gate electrode formedon the cap film, wherein the first gate insulating film includes a firstinsulating material with a first metal element diffused therein, the capfilm includes a second metal element which is different from the firstmetal element, the second gate insulating film includes a secondinsulating material, both of the first and second insulating materialsinclude silicon and a third metal element, and the third metal elementis different from the first and second metal elements, and the first andsecond metal elements are not silicon.
 2. The semiconductor device ofclaim 1, wherein the first metal element is lanthanum.
 3. Thesemiconductor device of claim 1, wherein the second metal element isaluminum or tantalum.
 4. The semiconductor device of claim 1, whereinthe first gate electrode includes titanium nitride.
 5. The semiconductordevice of claim 1, further comprising a second gate electrode formed onand in contact with the first gate electrode.
 6. The semiconductordevice of claim 5, wherein the second gate electrode is made ofpolysilicon.
 7. The semiconductor device of claim 1, wherein the thirdmetal element is hafnium.